Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
Identifieur interne : 002621 ( Main/Repository ); précédent : 002620; suivant : 002622Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
Auteurs : RBID : Pascal:11-0468092Descripteurs français
- Pascal (Inist)
- Fiabilité, Transistor bipolaire hétérojonction, Contrainte thermique, Contrainte électrique, Circuit intégré ultra rapide, Essai vieillissement accéléré, Collecteur, Emetteur, Densité courant, Idéalité, Gain courant, Endommagement, Jonction émetteur base, Défaillance, Energie activation, Phosphure d'indium, Composé binaire, InP.
English descriptors
- KwdEn :
- Accelerated aging test, Activation energy, Base emitter junction, Binary compound, Collector, Current density, Current gain, Damaging, Electric stress, Failures, Heterojunction bipolar transistors, Ideality, Indium phosphide, Reliability, Thermal stress, Transmitter, Very high speed integrated circuits.
Abstract
We report on the reliability of InGaAs/InP DHBT technology which has applications in very high-speed ICs (over 100 Gbits/s). This work presents the results of accelerated aging tests under thermal and electrical stresses performed on HBT up to 2000 h. Stress conditions consist in applying collector-emitter bias VCE from 1.3 to 2.7 V and collector current densities Jc of 400 and 610 kA/cm2. The corresponding junction temperatures TJ extends from 83 to 137 °C. The base current ideality factor ηB increase and the current gain β decrease have revealed a degradation of the base-emitter junction. The normalized current gain βnorm drop has occurred earlier for higher VCE and/or higher TJ. A 20% decrease of βnorm chosen as the failure criterion leads to an activation energy of 1.1 eV.
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Grandchamp</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818, Université Bordeaux 1-351, Cours de la Libération</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Hainaut, C" uniqKey="Hainaut C">C. Hainaut</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818, Université Bordeaux 1-351, Cours de la Libération</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Marc, F" uniqKey="Marc F">F. 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Maneux</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818, Université Bordeaux 1-351, Cours de la Libération</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Labat, N" uniqKey="Labat N">N. Labat</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818, Université Bordeaux 1-351, Cours de la Libération</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Zimmer, T" uniqKey="Zimmer T">T. Zimmer</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818, Université Bordeaux 1-351, Cours de la Libération</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Nodjiadjim, V" uniqKey="Nodjiadjim V">V. Nodjiadjim</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>III-V Lab, Joint Lab: Bell Labs, Thales Research and Technology and CEA-LETI, Route de Nozay</s1><s2>91461 Marcoussis</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marcoussis</settlement></placeName></affiliation></author><author><name sortKey="Riet, M" uniqKey="Riet M">M. Riet</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>III-V Lab, Joint Lab: Bell Labs, Thales Research and Technology and CEA-LETI, Route de Nozay</s1><s2>91461 Marcoussis</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marcoussis</settlement></placeName></affiliation></author><author><name sortKey="Godin, J" uniqKey="Godin J">J. Godin</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>III-V Lab, Joint Lab: Bell Labs, Thales Research and Technology and CEA-LETI, Route de Nozay</s1><s2>91461 Marcoussis</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marcoussis</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0468092</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0468092 INIST</idno><idno type="RBID">Pascal:11-0468092</idno><idno type="wicri:Area/Main/Corpus">002677</idno><idno type="wicri:Area/Main/Repository">002621</idno></publicationStmt><seriesStmt><idno type="ISSN">0026-2714</idno><title level="j" type="abbreviated">Microelectron. reliab.</title><title level="j" type="main">Microelectronics and reliability</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Accelerated aging test</term><term>Activation energy</term><term>Base emitter junction</term><term>Binary compound</term><term>Collector</term><term>Current density</term><term>Current gain</term><term>Damaging</term><term>Electric stress</term><term>Failures</term><term>Heterojunction bipolar transistors</term><term>Ideality</term><term>Indium phosphide</term><term>Reliability</term><term>Thermal stress</term><term>Transmitter</term><term>Very high speed integrated circuits</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Fiabilité</term><term>Transistor bipolaire hétérojonction</term><term>Contrainte thermique</term><term>Contrainte électrique</term><term>Circuit intégré ultra rapide</term><term>Essai vieillissement accéléré</term><term>Collecteur</term><term>Emetteur</term><term>Densité courant</term><term>Idéalité</term><term>Gain courant</term><term>Endommagement</term><term>Jonction émetteur base</term><term>Défaillance</term><term>Energie activation</term><term>Phosphure d'indium</term><term>Composé binaire</term><term>InP</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the reliability of InGaAs/InP DHBT technology which has applications in very high-speed ICs (over 100 Gbits/s). This work presents the results of accelerated aging tests under thermal and electrical stresses performed on HBT up to 2000 h. Stress conditions consist in applying collector-emitter bias VCE from 1.3 to 2.7 V and collector current densities Jc of 400 and 610 kA/cm2. The corresponding junction temperatures TJ extends from 83 to 137 °C. The base current ideality factor ηB increase and the current gain β decrease have revealed a degradation of the base-emitter junction. The normalized current gain βnorm drop has occurred earlier for higher VCE and/or higher TJ. A 20% decrease of βnorm chosen as the failure criterion leads to an activation energy of 1.1 eV.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0026-2714</s0></fA01><fA02 i1="01"><s0>MCRLAS</s0></fA02><fA03 i2="1"><s0>Microelectron. reliab.</s0></fA03><fA05><s2>51</s2></fA05><fA06><s2>9-11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2011)</s1></fA09><fA11 i1="01" i2="1"><s1>KONE (G. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>GRANDCHAMP (B.)</s1></fA11><fA11 i1="03" i2="1"><s1>HAINAUT (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>MARC (F.)</s1></fA11><fA11 i1="05" i2="1"><s1>MANEUX (C.)</s1></fA11><fA11 i1="06" i2="1"><s1>LABAT (N.)</s1></fA11><fA11 i1="07" i2="1"><s1>ZIMMER (T.)</s1></fA11><fA11 i1="08" i2="1"><s1>NODJIADJIM (V.)</s1></fA11><fA11 i1="09" i2="1"><s1>RIET (M.)</s1></fA11><fA11 i1="10" i2="1"><s1>GODIN (J.)</s1></fA11><fA12 i1="01" i2="1"><s1>LABAT (N.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>MARC (F.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>IMS, CNRS UMR 5818, Université Bordeaux 1-351, Cours de la Libération</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>III-V Lab, Joint Lab: Bell Labs, Thales Research and Technology and CEA-LETI, Route de Nozay</s1><s2>91461 Marcoussis</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA15 i1="01"><s1>IMS, University of Bordeaux</s1><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA20><s1>1730-1735</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>9626</s2><s5>354000191260520600</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0468092</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Microelectronics and reliability</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the reliability of InGaAs/InP DHBT technology which has applications in very high-speed ICs (over 100 Gbits/s). This work presents the results of accelerated aging tests under thermal and electrical stresses performed on HBT up to 2000 h. Stress conditions consist in applying collector-emitter bias VCE from 1.3 to 2.7 V and collector current densities Jc of 400 and 610 kA/cm2. The corresponding junction temperatures TJ extends from 83 to 137 °C. The base current ideality factor ηB increase and the current gain β decrease have revealed a degradation of the base-emitter junction. The normalized current gain βnorm drop has occurred earlier for higher VCE and/or higher TJ. 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